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32GB DDR4-2400 2Rx4 LP ECC REG RoHS

72,090L

(me TVSH)

SKU: CP0000005667 SKU e prodhuesit: M393A4K40BB1-CRC Kategori: , , Brand:

Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

KEY FEATURES

  • Include a Register for enhancing Clock, command and control signals.
  • Supports x4 / x8 Organization / up to 2 ranks per DIMM and 3DPC configuration.
  • Error correction available by added 8 bit parity signals.
  • Application: Server.

Datasheet

Out of stock

Përshkrimi

  • DDR: DDR4.
  • Dimm Type: RDIMM.
  • Density: 32GB.
  • Rank x Org.: 2R x 4.
  • Speed: 2400 Mbps.
  • Voltage: 1.2 V.
  • No. of Pin: 288.
  • Product Status: Mass Production.
  • VDDQ = 1.2V ± 0.06V.
  • 800 MHz fCK for 1600Mb/sec/pin,933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin,1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin.
  • 16 Banks (4 Bank Groups).
  • Programmable CAS Latency: 10,11,12,13,14,15,16,17,18,19,20.
  • Programmable Additive Latency (Posted CAS): 0, CL – 2, or CL – 1 clock.
  • Programmable CAS Write Latency (CWL) = 9, 11 (DDR4-1600), 10, 12 (DDR4-1866), 11, 14 (DDR4-2133), 12, 16 (DDR4-2400) and 14, 18 (DDR4-
  • 2666).
  • Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS].
  • Bi-directional Differential Data Strobe.
  • On Die Termination using ODT pin.
  • Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE £ 95°C.
  • Asynchronous Reset.

Më shumë informacion

Power Supply 1.2 V +- 0.06 V
SDRAM Activating Power Supply 2.5V ( 2.375V min, 2.75V max)
Component Composition (2G x 4) x 36

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