Home>IT Infrastructure>Components>Hard disks>SSD Samsung 850 EVO 250GB SATA3, 540/520MBs, IOPS 97K

SSD Samsung 850 EVO 250GB SATA3, 540/520MBs, IOPS 97K

37,200L

(me TVSH)

SKU: CP0000005095 SKU e prodhuesit: MZ-75E250B/EU Kategori: , , Brand:

The Samsung SSD 850 EVO elevates the everyday computing experience to a higher level of performance and endurance than was ever imagined. Powered by Samsung’s unmatched V-NAND technology, no wonder the 850 EVO is the best-selling* SSD for everyday computing. Designed for mainstream desktop PCs and laptops, the 850 EVO comes in a wide range of capacities and form factors.

KEY FEATURES

  • Uncompromised performance.
  • Guaranteed endurance and reliability.
  • Capacities range up to 4 TB.

Datasheet

Out of stock

Përshkrimi

Performance

  • Sequential Read: Up to 540 MB/sec Sequential Read.
  • Sequential Write: Up to 520 MB/sec Sequential Write.
  • Random Read (4 KB, QD32): Up to 97000 IOPS Random Read.
  • Random Write (4KB, QD32): Up to 88000 IOPS Random Write.

Environment

  • Average Power Consumption (system level): *Average: 2.2 W *Maximum: 2.4 W(Burst mode) * Actual power consumption may vary depending on system hardware & configuration.
  • Power consumption (Idle): Max. 50 mW * Actual power consumption may vary depending on system hardware & configuration.
  • Allowable Voltage: 5 V ± 5% Allowable voltage.
  • Reliability (MTBF): 1.5 Million Hours Reliability (MTBF).
  • Operating Temperature: 0 – 70 ℃ Operating Temperature.

Më shumë informacion

Shock 1500 G & 0.5 ms (Half sine)
Interface SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Encryption Support AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
Sequential Read Up to 540 MB/sec Sequential Read * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32) Up to 88000 IOPS Random Write * Performance may vary based on system hardware & configuration

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